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| Chip Silicon Rectifier SFM21-L THRU SFM26-L Super fast recovery type Features SMA-L 0.205(5.2) 0.189(4.8) Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.012(0.3) Typ. 0.110(2.8) 0.094(2.4) 0.181(4.6) 0.165(4.2) 0.075(1.9) 0.067(1.7) 0.034(0.85) 0.034(0.85) 0.024(0.60) Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram 0.024(0.60) Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) www..com PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o o Symbol IO IFSM MIN. TYP. MAX. 2.0 50 5.0 100 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100 C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR RJA CJ TSTG -55 75 10 C/w pF +150 o C SYMBOLS SFM21-L SFM22-L SFM23-L SFM24-L SFM25-L SFM26-L MARKING CODE S21 S22 S23 S24 S25 S26 V RRM 50 *1 V RMS 35 70 *2 VR *3 VF *4 T RR *5 Operating temperature (o C) (V) (V) (V) 50 100 150 200 300 400 (V) (nS) *1 Repetitive peak reverse voltage 0.95 35 -55 to +150 100 150 200 300 400 105 140 210 280 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 1.25 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (SFM21-L THRU SFM26-L) FIG.1-TYPICAL FORWARD CHARACTERISTICS 10 2.4 2.0 1.6 FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.0 1.2 0.8 0.4 Single Phase Half Wave 60Hz Resistive Or Inductive Load .1 Tj=25 C Pulse Width 300us 1% Duty Cycle 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 40 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50 NONINDUCTIVE 10 NONINDUCTIVE 30 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 20 10 (+) 25Vdc (approx.) () www..com D.U.T. () PULSE GENERATOR (NOTE 2) (+) OSCILLISCOPE (NOTE 1) 0 1 5 10 50 100 1 NONINDUCTIVE NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr 60 +0.5A | | | | | | | | 50 40 30 20 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 10 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) |
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